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RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)
4
: PRSS0004AE-B LDPAK(S)-(1)
4
: PRSS0004AE-C LDPAK(S)-(2) )
4
D
G 1 1 2 3 1
1. Gate 2. Drain 3. Source 4. Drain
S
2
3
2
3
RJK2006DPJ
RJK2006DPE
RJK2006DPF
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 200 30 40 100 40 100 27 48.6 100 1.25 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 1 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 200 -- -- 3.0 15 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 26 0.052 1800 330 43 30 180 85 100 43 11 20 1.0 150 0.8 Max -- 1 0.1 4.5 -- 0.059 -- -- -- -- -- -- -- -- -- -- 1.5 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VDS = 10 V Note4 ID = 20 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 20 A VGS = 10 V RL = 5 Rg = 10 VDD = 160 V VGS = 10 V ID = 40 A IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/dt = 100 A/s
REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 2 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Main Characteristics
Maximum Safe Operation Area
1000
10
= 10 0
Typical Output Characteristics
50 10 V 7V 8V 6.5V Ta = 25C Pulse Test 6V
Drain Current ID (A)
PW
10 Operation in this area is limited by RDS(on)
s
Drain Current ID (A)
100
s
40
30
1
20
5.5 V
10
0.1 Tc = 25C 1 shot 0.01 0.1 1
VGS = 5 V
10 100 1000 0 0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical)
Drain to Source on State Resistance RDS(on) ()
1 VGS = 10 V Ta = 25C Pulse Test
Typical Transfer Characteristics
50 VDS = 10 V Pulse Test
Drain Current ID (A)
40
30
0.1
20
Tc = 75C 25C -25C
10
0
0.01 1 10 100
0
2
4
6
8
10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical)
VGS = 10 V Pulse Test 0.16 ID = 40 A 0.12 20 A
Drain Current ID (A)
Static Drain to Source on State Resistance RDS(on) ()
Body-Drain Diode Reverse Recovery Time (Typical)
1000
Reverse Recovery Time trr (ns)
0.20
100
0.08 10 A 0.04
di / dt = 100 A / s VGS = 0, Ta = 25C 10 1 10 100
0 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Reverse Drain Current IDR (A)
REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 3 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Typical Capacitance vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10000 Ta = 25C
Dynamic Input Characteristics (Typical)
ID = 40 A Ta = 25 C VGS VDD = 160 V 100 V 50 V
Capacitance C (pF)
Ciss 1000
300
12
Coss 100 Crss VGS = 0 f = 1 MHz 50 100
200 V DS
8
100
VDD = 160 V 100 V 50 V 20 40 60 80
4
10 0
0 100
0
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
50
Gate to Source Cutoff Voltage VGS(off) (V)
Reverse Drain Current vs. Source to Drain Voltage (Typical)
Reverse Drain Current IDR (A)
VGS = 0 V Ta = 25 C Pulse Test
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
5 VDS = 10 V
40
4
30
3
ID = 10 mA 1 mA 0.1 mA
20 10 0 0 0.4 0.8 1.2 1.6 2.0
2 1
0 -25
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature
Tc (C)
REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 4 of 7
Gate to Source Voltage VGS (V)
400
16
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C
PDM PW T
0.03
0.02 1 e 0.0 puls t ho 1s
100 1m 10 m Pulse Width
D=
PW T
0.01 10
100 m PW (s)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 100 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 5 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Package Dimensions
* RJK2006DPJ
Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.76 0.1 2.54 0.5 2.54 0.5
0.4 0.1
* RJK2006DPE
Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 6 of 7
1.7
1.3 0.15
7.8 6.6
RJK2006DPJ, RJK2006DPE, RJK2006DPF * RJK2006DPF
Package Name LDPAK(S)-(2) JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
2.49 0.2
(2.3)
0.2 0.1 + 0.1 -
(1.5)
10.0
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5 0.4 0.1
0.3 5.0 + 0.5 -
0.2 0.86 + 0.1 -
2.54 0.5
Ordering Information
Part No. RJK2006DPE-00-J3 Quantity 1000 pcs Taping Shipping Container
REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page 7 of 7
1.7
1.3 0.15
7.8 6.6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2

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